Syscom Transistor de Potencia MOSFET, Canal P, 50 Volt, 18 Amp., 0.14 Ohm, 74 Watt, TO-220AB, para Analizador III.
Marca:
Syscom
Referencia:
SYSCOM_IRF9Z30
Transistor de Potencia MOSFET, Canal P, 50 Volt, 18 Amp., 0.14 Ohm, 74 Watt, TO-220AB, para Analizador III.
| Ancho: 11 |
| Profundidad: 15 |
| Altura: 4 |
| Peso volumetrico: 0.139008 |
| Unidad de medida: Pieza |
Información de Producto
Transistor de Potencia MOSFET, Canal P, 50 Volt, 18 Amp., 0.14 Ohm, 74 Watt, TO-220AB, para Analizador III.
Modelo: IRF9Z30
Marca: SYSCOM
Especificaciones:
Transistor de Potencia MOSFET, Canal P, 50 Volt, 18 Amp., 0.14 Ohm, 74 Watt, TO-220AB, para Analizador III.
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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50 V
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Current - Continuous Drain (Id) @ 25°C
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18A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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140mOhm @ 9.3A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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39 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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900 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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74W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Through Hole
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Supplier Device Package
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TO-220AB
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Package / Case
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TO-220-3
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Base Product Number
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